- 专利标题: Redundant column or row in resistive random access memory
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申请号: US15216589申请日: 2016-07-21
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公开(公告)号: US09953728B2公开(公告)日: 2018-04-24
- 发明人: Emmanuelle J Merced Grafals , Brent Buchanan , Le Zheng
- 申请人: Hewlett Packard Enterprise Development LP
- 申请人地址: US TX Houston
- 专利权人: Hewlett Packard Enterprise Development LP
- 当前专利权人: Hewlett Packard Enterprise Development LP
- 当前专利权人地址: US TX Houston
- 代理机构: Trop, Pruner & Hu, P.C.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C29/00 ; G11C13/00 ; H01L45/00
摘要:
Examples include a resistive random access memory (RRAM) array to support a redundant column. Some examples include an RRAM cell at a cross point of a column line and a row line of the RRAM array. A first column line may be coupled to a first input of a first current-steering multiplexer and the first current-steering multiplexer may have an output coupled to a first current sense amplifier and a select input coupled to a first column select signal. A second column line may be coupled to a second input of the first current-steering multiplexer and coupled to a first input of a second current-steering multiplexer. The second current-steering multiplexer may have an output coupled to a second current sense amplifier and a select input coupled to a second column select signal. A third column line may be coupled to a second input of the second current-steering multiplexer.
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