- 专利标题: Non-ionic aryl ketone based polymeric photo-acid generators
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申请号: US15235673申请日: 2016-08-12
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公开(公告)号: US09951164B2公开(公告)日: 2018-04-24
- 发明人: Takehisa Ishimaru , Satoru Narizuka , Daniel P. Sanders , Ratnam Sooriyakumaran , Hoa D. Truong , Rudy J. Wojtecki
- 申请人: International Business Machines Corporation , Central Glass Co., Ltd.
- 申请人地址: US NY Armonk JP Ube-shi, Yamaguchi
- 专利权人: International Business Machines Corporation,Central Glass Co., Ltd.
- 当前专利权人: International Business Machines Corporation,Central Glass Co., Ltd.
- 当前专利权人地址: US NY Armonk JP Ube-shi, Yamaguchi
- 代理商 Michael R. Roberts
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; G03F7/38 ; C07C317/04 ; C07C317/06 ; C07C317/08 ; C07C317/10 ; C07C317/14 ; C07C317/24 ; C07C317/26 ; C07C317/32 ; C08F212/04 ; C08F212/32 ; C08F220/24 ; C08F220/38 ; C07C309/69 ; C07C309/70 ; C08F220/68 ; G03F7/039 ; G03F7/038 ; G03F7/20 ; G03F7/32 ; C07C309/68 ; C07C309/77
摘要:
Non-ionic photo-acid generating (PAG) polymerizable monomers were prepared that contain a side chain sulfonate ester of an alpha-hydroxy aryl ketone. The aryl ketone group has a perfluorinated substituent alpha to the ketone carbonyl. The sulfur of the sulfonate ester is also directly linked to a fluorinated group. PAG polymers prepared from the PAG monomers release a strong sulfonic acid when exposed to high energy radiation such as deep UV or extreme UV light. The photo-generated sulfonic acid has a low diffusion rate in an exposed resist layer subjected to a post-exposure bake (PEB) at 100° C. to 150° C., resulting in formation of good line patterns after development.
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