发明授权

  • 专利标题: RF amplifier
  • 申请号: US15209816
    申请日: 2016-07-14
  • 公开(公告)号: US09948247B2
    公开(公告)日: 2018-04-17
  • 发明人: Gian Hoogzaad
  • 申请人: NXP B.V.
  • 申请人地址: NL Eindhoven
  • 专利权人: NXP B.V.
  • 当前专利权人: NXP B.V.
  • 当前专利权人地址: NL Eindhoven
  • 优先权: EP15177144 20150716
  • 主分类号: H03F1/52
  • IPC分类号: H03F1/52 H03F3/195 H03F1/22 H03F3/45
RF amplifier
摘要:
An RF amplifier comprising an input-transistor having an input-transistor-base terminal, an input-transistor-collector terminal and an input-transistor-emitter terminal; a degeneration-component connected between the input-transistor-emitter terminal and a ground terminal; and a protection-transistor having a protection-transistor-base terminal, a protection-transistor-collector terminal and a protection-transistor-emitter terminal. The input-transistor-base terminal is connected to the protection-transistor-emitter terminal, and the protection-transistor-base terminal is connected to the input-transistor-emitter.
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