- 专利标题： Semiconductor structure having fins and method for manufacturing the same
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申请号： US15226007申请日： 2016-08-02
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公开(公告)号： US09941279B2公开(公告)日： 2018-04-10
- 发明人: Kuo-Cheng Ching , Shi-Ning Ju , Chih-Hao Wang , Ying-Keung Leung , Carlos H. Diaz
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/8234 ; H01L29/78 ; H01L27/088 ; H01L29/06 ; H01L21/762 ; H01L27/108 ; H01L21/3065
摘要：
A semiconductor structure includes a substrate, at least one active fin present on the substrate, and at least one isolation dielectric surrounding the active fin. The isolation dielectric has at least one trench therein. The semiconductor structure further includes at least one dielectric liner present on at least one sidewall of the trench of the isolation dielectric, and at least one filling dielectric present in the trench of the isolation dielectric.
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