- 专利标题: Semiconductor device and method for manufacturing the same
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申请号: US14587521申请日: 2014-12-31
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公开(公告)号: US09893029B2公开(公告)日: 2018-02-13
- 发明人: Hirohisa Matsuki
- 申请人: FUJITSU SEMICONDUCTOR LIMITED
- 申请人地址: JP Yokohama
- 专利权人: SOCIONEXT INC.
- 当前专利权人: SOCIONEXT INC.
- 当前专利权人地址: JP Yokohama
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2009-294180 20091225
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00
摘要:
A semiconductor device includes: an integrated circuit having an electrode pad; a first insulating layer disposed on the integrated circuit; a redistribution layer including a plurality of wirings and disposed on the first insulating layer, at least one of the plurality of wirings being electrically coupled to the electrode pad; a second insulating layer having a opening on at least a portion of the plurality of wirings; a metal film disposed on the opening and on the second insulating layer, and electrically coupled to at least one of the plurality of wirings; and a solder bump the solder bump overhanging at least one of the plurality of wirings not electrically coupled to the metal film.
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