- 专利标题： Testing TSV with current/voltage source, resistor, comparator, and scan cell
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申请号： US15176874申请日： 2016-06-08
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公开(公告)号： US09880222B2公开(公告)日： 2018-01-30
- 发明人: Lee D. Whetsel , Baher S. Haroun
- 申请人： TEXAS INSTRUMENTS INCORPORATED
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Lawrence J. Bassuk; Charles A. Brill; Frank D. Cimino
- 主分类号： G01R31/3177
- IPC分类号： G01R31/3177 ; G01R31/26 ; G01R31/3185 ; G01R31/317
摘要：
This disclosure describes a novel method and apparatus for testing TSVs within a semiconductor device. According to embodiments illustrated and described in the disclosure, a TSV may be tested by stimulating and measuring a response from a first end of a TSV while the second end of the TSV held at ground potential. Multiple TSVs within the semiconductor device may be tested in parallel to reduce the TSV testing time according to the disclosure.
公开/授权文献
- US20160282411A1 TSV TESTING USING TEST CIRCUITS AND GROUNDING MEANS 公开/授权日：2016-09-29
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