- 专利标题： Simultaneous formation of source/drain openings with different profiles
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申请号： US15013585申请日： 2016-02-02
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公开(公告)号： US09870954B2公开(公告)日： 2018-01-16
- 发明人: Eric Chih-Fang Liu , Srisuda Thitinun , Dai-Lin Wu , Ryan Chia-Jen Chen , Chao-Cheng Chen
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/3213 ; H01L21/322 ; H01L21/8238 ; H01L21/8234 ; H01L21/3065 ; H01L29/66 ; H01L21/762 ; H01L21/02 ; H01L29/417
摘要：
A method includes forming a first gate stack and a second gate stack over a first portion and a second portion, respectively, of a semiconductor substrate, masking the first portion of the semiconductor substrate, and with the first portion of the semiconductor substrate being masked, implanting the second portion of the semiconductor substrate with an etch-tuning element. The first portion and the second portion of the semiconductor substrate are etched simultaneously to form a first opening and a second opening, respectively, in the semiconductor substrate. The method further includes epitaxially growing a first semiconductor region in the first opening, and epitaxially growing a second semiconductor region in the second opening.
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