- 专利标题： Oxide semiconductor target, oxide semiconductor film and method for producing same, and thin film transistor
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申请号： US14783435申请日： 2014-04-10
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公开(公告)号： US09837543B2公开(公告)日： 2017-12-05
- 发明人: Hiroyuki Uchiyama , Hideko Fukushima
- 申请人： Hitachi Metals, LTD.
- 申请人地址： JP Tokyo
- 专利权人： HITACHI METALS, LTD.
- 当前专利权人： HITACHI METALS, LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： SOLARIS Intellectual Property Group, PLLC
- 优先权： JP2013-084253 20130412
- 国际申请： PCT/JP2014/060444 WO 20140410
- 国际公布： WO2014/168224 WO 20141016
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/786 ; C23C14/08 ; C23C14/34 ; H01L21/02
摘要：
The invention provides an oxide semiconductor target including an oxide sintered body including zinc, tin, oxygen, and aluminum in a content ratio of from 0.005% by mass to 0.2% by mass with respect to the total mass of the oxide sintered body, in which the content ratio of silicon to the total mass of the oxide sintered body is less than 0.03% by mass.
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