- 专利标题: Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state
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申请号: US15246853申请日: 2016-08-25
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公开(公告)号: US09837442B2公开(公告)日: 2017-12-05
- 发明人: Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama , Masashi Tsubuku
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权: JP2009-185317 20090807; JP2009-206489 20090907
- 主分类号: G02F1/136
- IPC分类号: G02F1/136 ; H01L27/12 ; H01L29/786 ; G02F1/133 ; G02F1/1345 ; G02F1/1368 ; G11C19/28 ; H01L29/24 ; G02F1/1333 ; G02F1/1335 ; G02F1/1337 ; G02F1/1339 ; G02F1/1343 ; G02F1/1362
摘要:
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
公开/授权文献
- US20160365460A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2016-12-15
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