- 专利标题: Power circuit and power module using MISFET having control circuit disposed between gate and source
-
申请号: US15192677申请日: 2016-06-24
-
公开(公告)号: US09819338B2公开(公告)日: 2017-11-14
- 发明人: Hirotaka Otake , Tatsuya Yanagi , Yusuke Nakakohara
- 申请人: ROHM CO., LTD.
- 申请人地址: JP Kyoto
- 专利权人: ROHM CO., LTD.
- 当前专利权人: ROHM CO., LTD.
- 当前专利权人地址: JP Kyoto
- 代理机构: Hamre, Schumann, Mueller & Larson, P.C.
- 优先权: JP2013-268787 20131226
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H03K17/16 ; H01L23/10 ; H01L29/16 ; H01L29/78 ; H03K17/041 ; H01L23/495 ; H01L23/552 ; H01L23/31
摘要:
The power circuit includes: a main substrate; a first electrode pattern disposed on the main substrate and connected to a positive-side power terminal P; a second electrode pattern disposed on a main substrate and connected to a negative-side power terminal N; a third electrode pattern disposed on the main substrate and connected to an output terminal O; a first MISFET Q1 of which a first drain is disposed on the first electrode pattern; a second MISFET Q4 of which a second drain is disposed on the third electrode pattern; a first control circuit (DG1) connected between a first gate G1 and a first source S1 of the first MISFET, and configured to control a current path conducted from the first source towards the first gate.
公开/授权文献
- US20160308523A1 POWER CIRCUIT AND POWER MODULE 公开/授权日:2016-10-20
信息查询
IPC分类: