A magnetoresistance element can have a substrate; a ferromagnetic seed layer consisting of a binary alloy of NiFe; and a first nonmagnetic spacer layer disposed under and directly adjacent to the ferromagnetic seed layer and proximate to the substrate, wherein the first nonmagnetic spacer layer is comprised of Ta or Ru. A method fabricating of fabricating a magnetoresistance element can include depositing a seed layer structure over a semiconductor substrate, wherein the depositing the seed layer structure includes depositing at least a ferromagnetic seed layer over the substrate. The method further can further include depositing a free layer structure over the seed layer structure, wherein the depositing the ferromagnetic seed layer comprises depositing the ferromagnetic seed layer in the presence of a motion along a predetermined direction and in the presence of a predetermined magnetic field having the same predetermined direction.