Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
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Application No.: US13551107Application Date: 2012-07-17
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Publication No.: US09799750B2Publication Date: 2017-10-24
- Inventor: Chun-Fai Cheng , Han-Ting Tsai , An-Shen Chang , Hui-Min Lin
- Applicant: Chun-Fai Cheng , Han-Ting Tsai , An-Shen Chang , Hui-Min Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L29/66 ; H01L21/8238 ; H01L29/78
Abstract:
A semiconductor device and a method for fabricating the semiconductor device are disclosed. An isolation structure is formed in a substrate and a gate stack is formed atop the isolation structure. A spacer is formed adjoining a sidewall of the gate stack and extends beyond an edge of the isolation structure. The disclosed method provides an improved method for protecting the isolation structure by using the spacer. The spacer can prevent the isolation structure from being damaged by chemicals, therefor, to enhance contact landing and upgrade the device performance.
Public/Granted literature
- US20140021517A1 Semiconductor Device and Fabrication Method Thereof Public/Granted day:2014-01-23
Information query
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