- 专利标题： Self-forming spacers using oxidation
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申请号： US14492123申请日： 2014-09-22
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公开(公告)号： US09773865B2公开(公告)日： 2017-09-26
- 发明人: Kevin K. Chan , Masaharu Kobayashi , Effendi Leobandung
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 L. Jeffrey Kelly
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L21/365 ; H01L21/311 ; H01L21/321
摘要：
A method of forming a self-forming spacer using oxidation. The self-forming spacer may include forming a fin field effect transistor on a substrate, the fin field effect transistor includes a gate on a fin, the gate is perpendicular to the fin; forming a gate spacer on the gate and a fin spacer on the fin, the gate spacer and the fin spacer are formed in a single step by oxidizing an exposed surface of the gate and an exposed surface of the fin; and removing the fin spacer from the fin.
公开/授权文献
- US20160086796A1 SELF-FORMING SPACERS USING OXIDATION 公开/授权日：2016-03-24
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