Invention Grant
- Patent Title: Method of using polysilicon as stop layer in a replacement metal gate process
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Application No.: US15161294Application Date: 2016-05-23
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Publication No.: US09761692B1Publication Date: 2017-09-12
- Inventor: Chao-Hung Lin , Shih-Hung Tsai , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW105112577A 20160422
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L29/66 ; H01L27/092 ; H01L21/8238
Abstract:
A method for fabricating semiconductor device preferably forms a stop layer composed of amorphous silicon between a first BM layer and a second BBM layer of one of the gate structure during the fabrication of a device having multi-VT gate structures. By doing so, it would be desirable to use the stop layer as a protecting layer during the etching process of work function metal layers and the second BBM layer so that the first BBM layer could be protected from etchant such as SC1 and the overall thickness of the first BBM layer and the performance of the device could be maintained.
Information query
IPC分类:
