- 专利标题： Integrated circuits including replacement gate structures and methods for fabricating the same
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申请号： US14560054申请日： 2014-12-04
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公开(公告)号： US09761691B2公开(公告)日： 2017-09-12
- 发明人: Dong-Woon Shin , Min-Hwa Chi , Xusheng Wu
- 申请人： GLOBALFOUNDRIES, Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES, INC.
- 当前专利权人： GLOBALFOUNDRIES, INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Lorenz & Kopf, LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78 ; H01L29/49 ; H01L29/51
摘要：
Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming sidewall spacer structures laterally adjacent to a dummy gate structure that overlies a semiconductor substrate. Additional sidewall spacer structures are formed laterally adjacent to the sidewall spacer structures and under lower portions of the sidewall spacer structures. The dummy gate structure is replaced with a replacement gate structure.
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