- 专利标题： Semiconductor structure with a silicon germanium alloy fin and silicon germanium alloy pad structure
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申请号： US14813330申请日： 2015-07-30
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公开(公告)号： US09761667B2公开(公告)日： 2017-09-12
- 发明人: Kangguo Cheng , Pouya Hashemi , Ali Khakifirooz , Alexander Reznicek
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Daniel P. Morris, Esq.
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L21/02 ; H01L29/161 ; H01L29/66 ; H01L29/78 ; H01L21/308
摘要：
A semiconductor structure is provided that includes a silicon germanium alloy fin having a second germanium content located on a first portion of a substrate. The structure further includes a laterally graded silicon germanium alloy material portion located on a second portion of the substrate. The laterally graded silicon germanium alloy material portion is spaced apart from the silicon germanium alloy fin and has end portions having the second germanium content and a middle portion located between the end portions that has a first germanium content that is less than the second germanium content.
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