- 专利标题： Method of forming strained structures of semiconductor devices
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申请号： US15005628申请日： 2016-01-25
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公开(公告)号： US09748388B2公开(公告)日： 2017-08-29
- 发明人: Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/3065 ; H01L29/08 ; H01L29/06 ; H01L29/20 ; H01L29/22 ; H01L29/267 ; H01L29/66
摘要：
A method of fabricating a semiconductor device comprises providing a substrate with a shallow trench isolation (STI) within the substrate and a gate stack. A cavity is formed between the gate stack and the STI. The cavity comprises one sidewall formed by the STI, one sidewall formed by the substrate, and a bottom surface formed by the substrate. A film is grown in the cavity and thereafter an opening formed by removing a first portion of the strained film until exposing the bottom surface of the substrate while a second portion of the strained film adjoins the STI sidewall. Another epitaxial layer is then grown in the opening.
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