- 专利标题： Nonvolatile semiconductor storage device including cell transistor performance measuring cells
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申请号： US14826162申请日： 2015-08-13
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公开(公告)号： US09747979B2公开(公告)日： 2017-08-29
- 发明人: Masayoshi Nakayama , Kazuyuki Kouno , Reiji Mochida , Keita Takahashi
- 申请人： Panasonic Intellectual Property Management Co., Ltd.
- 申请人地址： JP Osaka
- 专利权人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2013-030228 20130219
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; G11C7/14 ; G11C8/08 ; G11C29/24 ; G11C13/00 ; H01L27/10 ; H01L45/00 ; H01L27/24 ; G11C29/12
摘要：
A memory array includes a plurality of memory cells arranged in a matrix, each memory cell including a cell transistor and a variable resistance element connected to an end of the cell transistor, and a cell transistor performance measuring cell including a MOS transistor. The cell transistor performance measuring cell is used to stabilize resistance values in a low resistance state and a high resistance state of the variable resistance element irrespective of variations in the cell transistor and thereby improve read characteristics and reliability characteristics of a nonvolatile semiconductor storage device.
公开/授权文献
- US20150348626A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 公开/授权日：2015-12-03
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