- 专利标题： Crystallization method for oxide semiconductor layer, semiconductor device manufactured using the same, and method for manufacturing the semiconductor device
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申请号： US14937598申请日： 2015-11-10
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公开(公告)号： US09735281B2公开(公告)日： 2017-08-15
- 发明人: Min-Cheol Kim , Youn-Gyoung Chang , Kwon-Shik Park , So-Hyung Lee , Ho-Young Jung , Ha-Jin Yoo , Jeong-Suk Yang
- 申请人： LG Display Co., Ltd.
- 申请人地址： KR Seoul
- 专利权人： LG DISPLAY CO., LTD.
- 当前专利权人： LG DISPLAY CO., LTD.
- 当前专利权人地址： KR Seoul
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： KR10-2014-0175686 20141209
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L29/786 ; H01L21/02 ; H01L21/477 ; H01L29/10
摘要：
An oxide semiconductor crystallization method may include depositing an In—Ga—Zn oxide over the substrate while heating a substrate to a temperature of 200 to 300° C., and heat-treating the deposited In—Ga—Zn oxide at a temperature of 200 to 350° C., thereby forming an oxide semiconductor layer crystallized throughout an entire thickness thereof.
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