Invention Grant
- Patent Title: Interconnection structure, fabricating method thereof, and semiconductor device using the same
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Application No.: US14992997Application Date: 2016-01-11
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Publication No.: US09721896B2Publication Date: 2017-08-01
- Inventor: Yu-Hung Lin , Chi-Wen Liu , Horng-Huei Tseng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/535 ; H01L21/768 ; H01L23/532

Abstract:
A semiconductor device includes a semiconductor substrate comprising a contact region, a silicide present on the contact region, a dielectric layer present on the semiconductor substrate, the dielectric layer comprising an opening to expose a portion of the contact region, a conductor present in the opening, a barrier layer present between the conductor and the dielectric layer, and a metal layer present between the barrier layer and the dielectric layer, wherein a Si concentration of the silicide is varied along a height of the silicide.
Public/Granted literature
- US20170077032A1 INTERCONNECTION STRUCTURE, FABRICATING METHOD THEREOF, AND SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2017-03-16
Information query
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