Invention Grant
- Patent Title: Semiconductor structure with feature spacer and method for manufacturing the same
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Application No.: US15194711Application Date: 2016-06-28
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Publication No.: US09716096B1Publication Date: 2017-07-25
- Inventor: Kuo-Cheng Ching , Chun-Hsiung Lin , Chih-Hao Wang , Ying-Keung Leung , Carlos H. Diaz
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/11 ; H01L21/8234 ; H01L29/06 ; H01L29/66 ; H01L21/3115 ; H01L21/02
Abstract:
A semiconductor structure includes a first fin structure, a gate structure, a first spacer, and a second space spacer. The gate structure traverses the first fin structure. The first fin structure has an exposed portion exposed out of the gate structure. The first spacer is positioned at and in contact with a side of the exposed portion of the first fin structure. The second space spacer is positioned at and in contact with another side of the exposed portion of the first fin structure. The first spacer has a top surface over than a top surface of the second spacer.
Information query
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