Invention Grant
- Patent Title: Light emitting device
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Application No.: US14924719Application Date: 2015-10-28
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Publication No.: US09705051B2Publication Date: 2017-07-11
- Inventor: Yun-Li Li , Po-Jen Su , Hsuan-Wei Mai
- Applicant: PlayNitride Inc.
- Applicant Address: TW Tainan
- Assignee: PlayNitride Inc.
- Current Assignee: PlayNitride Inc.
- Current Assignee Address: TW Tainan
- Agency: Jianq Chyun IP Office
- Priority: TW104114841A 20150511
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L33/44 ; H01L33/62 ; H01L33/38

Abstract:
A light emitting device includes an epitaxial structure and a sheet-shaped wavelength converting layer. The sheet-shaped wavelength converting layer is disposed on the epitaxial structure and at least includes a first wavelength converting unit layer and a second wavelength converting unit layer. The first wavelength converting unit layer is disposed between the second wavelength converting unit layer and the epitaxial structure. An emission peak wavelength of the first wavelength converting unit layer is greater than an emission peak wavelength of the second wavelength converting unit layer. A full width half magnitude of the second wavelength converting unit layer is greater than a full width half magnitude of the first wavelength converting unit layer.
Public/Granted literature
- US20160141467A1 LIGHT EMITTING DEVICE Public/Granted day:2016-05-19
Information query
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