Invention Grant
- Patent Title: Semiconductor device including capacitor and method of fabricating the same
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Application No.: US14863820Application Date: 2015-09-24
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Publication No.: US09673272B2Publication Date: 2017-06-06
- Inventor: Yunjung Choi , Se Hoon Oh , Jin-Su Lee , Younsoo Kim , HanJin Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0138430 20141014
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L49/02
Abstract:
A semiconductor device includes a lower electrode on a lower structure, a dielectric layer conformally covering a surface of the lower electrode, an upper electrode conformally covering a surface of the dielectric layer, and a barrier layer on the upper electrode. The barrier layer and the upper electrode define a space on a sidewall of the lower electrode.
Public/Granted literature
- US20160104763A1 SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2016-04-14
Information query
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