Invention Grant
- Patent Title: Semiconductor device having germanium active layer with underlying diffusion barrier layer
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Application No.: US13996502Application Date: 2011-12-23
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Publication No.: US09608055B2Publication Date: 2017-03-28
- Inventor: Willy Rachmady , Van H. Le , Ravi Pillarisetty , Jack T. Kavalieros , Robert S. Chau , Harold W. Kennel
- Applicant: Willy Rachmady , Van H. Le , Ravi Pillarisetty , Jack T. Kavalieros , Robert S. Chau , Harold W. Kennel
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2011/067241 WO 20111223
- International Announcement: WO2013/095655 WO 20130627
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/775 ; H01L29/778 ; H01L29/10 ; H01L29/786 ; H01L21/28 ; H01L29/165 ; H01L29/78 ; B82Y10/00

Abstract:
Semiconductor devices having germanium active layers with underlying diffusion barrier layers are described. For example, a semiconductor device includes a gate electrode stack disposed above a substrate. A germanium active layer is disposed above the substrate, underneath the gate electrode stack. A diffusion barrier layer is disposed above the substrate, below the germanium active layer. A junction leakage suppression layer is disposed above the substrate, below the diffusion barrier layer. Source and drain regions are disposed above the junction leakage suppression layer, on either side of the gate electrode stack.
Public/Granted literature
- US20140008700A1 SEMICONDUCTOR DEVICE HAVING GERMANIUM ACTIVE LAYER WITH UNDERLYING DIFFUSION BARRIER LAYER Public/Granted day:2014-01-09
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