Invention Grant
- Patent Title: Cascode CMOS structure
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Application No.: US14464730Application Date: 2014-08-21
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Publication No.: US09607121B2Publication Date: 2017-03-28
- Inventor: Fu-Lung Hsueh , Chih-Ping Chao , Chewn-Pu Jou , Yung-Chow Peng , Harry-Hak-Lay Chuang , Kuo-Tung Sung
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L27/088 ; H01L27/092

Abstract:
A MOS device includes an active area having first and second contacts. First and second gates are disposed between the first and second contacts. The first gate is disposed adjacent to the first contact and has a third contact. The second gate is disposed adjacent to the second contact and has a fourth contact coupled to the third contact. A transistor defined by the active area and the first gate has a first threshold voltage, and a transistor defined by the active area and the second gate has a second threshold voltage.
Public/Granted literature
- US20150020039A1 CASCODE CMOS STRUCTURE Public/Granted day:2015-01-15
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