Invention Grant
US09577097B2 Semiconductor device having stressor and method of forming the same
有权
具有应力源的半导体器件及其形成方法
- Patent Title: Semiconductor device having stressor and method of forming the same
- Patent Title (中): 具有应力源的半导体器件及其形成方法
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Application No.: US14806782Application Date: 2015-07-23
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Publication No.: US09577097B2Publication Date: 2017-02-21
- Inventor: Jaehoon Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0175086 20141208
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/737 ; H01L29/165 ; H01L29/66 ; H01L29/267 ; H01L29/417 ; H01L29/51
Abstract:
A semiconductor device having a stressor is provided. A first trench and a second trench spaced apart from each other are formed in a substrate. A channel area is defined between the first trench and the second trench. A gate dielectric layer is formed on the channel area. A gate electrode is formed on the gate dielectric layer. The stressor includes a plurality of semiconductor layers formed in the first trench and the second trench and a plurality of interlayers formed between the semiconductor layers. Sidewalls of the first trench and the second trench are v-shaped (e.g., have a shape).
Public/Granted literature
- US20160163860A1 SEMICONDUCTOR DEVICE HAVING STRESSOR AND METHOD OF FORMING THE SAME Public/Granted day:2016-06-09
Information query
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