Invention Grant
US09572237B2 Structure electron beam inspection system for inspecting extreme ultraviolet mask and structure for discharging extreme ultraviolet mask
有权
结构电子束检查系统，用于检查极紫外线掩膜和结构，用于放电极紫外线掩膜
- Patent Title: Structure electron beam inspection system for inspecting extreme ultraviolet mask and structure for discharging extreme ultraviolet mask
- Patent Title (中): 结构电子束检查系统，用于检查极紫外线掩膜和结构，用于放电极紫外线掩膜
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Application No.: US14755626Application Date: 2015-06-30
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Publication No.: US09572237B2Publication Date: 2017-02-14
- Inventor: You-Jin Wang , Chiyan Kuan , Chung-Shih Pan
- Applicant: Hermes Microvision Inc.
- Applicant Address: TW Hsinchu
- Assignee: HERMES MICROVISION INC.
- Current Assignee: HERMES MICROVISION INC.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: A61N5/00
- IPC: A61N5/00 ; H05F3/02 ; H01J37/02 ; H01J37/20 ; G01N23/225
Abstract:
A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
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