发明授权
US09570460B2 Spacer passivation for high-aspect ratio opening film removal and cleaning
有权
间隔钝化用于高纵横比打开薄膜去除和清洁
- 专利标题： Spacer passivation for high-aspect ratio opening film removal and cleaning
- 专利标题（中）： 间隔钝化用于高纵横比打开薄膜去除和清洁
-
申请号： US14620674申请日： 2015-02-12
-
公开(公告)号： US09570460B2公开(公告)日： 2017-02-14
- 发明人: Senaka Krishna Kanakamedala , Yao-Sheng Lee , Raghuveer S. Makala , George Matamis
- 申请人： SANDISK TECHNOLOGIES INC.
- 申请人地址： US TX Plano
- 专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人地址： US TX Plano
- 代理机构： The Marbury Law Group PLLC
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L27/115 ; H01L21/311 ; H01L21/28 ; H01L21/02
摘要：
A method of making a semiconductor device includes forming a stack of alternating layers of a first material and a second material over a substrate, etching the stack to form at least one opening in the stack such that a damaged region is located on a bottom surface of the at least one opening, forming a masking layer on a sidewall of the at least one opening while the bottom surface of the at least one opening is not covered by the masking layer, and further etching the bottom surface of the at least one opening remove the damaged region.
公开/授权文献
信息查询
IPC分类:
