发明授权
- 专利标题： Method to selectively polish silicon carbide films
- 专利标题（中）： 选择性抛光碳化硅膜的方法
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申请号： US12630288申请日： 2009-12-03
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公开(公告)号： US09548211B2公开(公告)日： 2017-01-17
- 发明人: William Ward , Timothy Johns
- 申请人： William Ward , Timothy Johns
- 申请人地址： US IL Aurora
- 专利权人： Cabot Microelectronics Corporation
- 当前专利权人： Cabot Microelectronics Corporation
- 当前专利权人地址： US IL Aurora
- 代理商 Thomas Omholt; Erika Wilson
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461 ; B44C1/22 ; C23F1/00 ; C03C15/00 ; C03C25/68 ; H01L21/3105 ; H01L21/321 ; C09G1/02 ; H01L29/16
摘要：
The present invention provides a method for selectively removing silicon carbide from the surface of a substrate in preference to silicon dioxide. The method comprises abrading a surface of substrate with a polishing composition that comprises a particulate abrasive, at least one acidic buffering agent, and an aqueous carrier.
公开/授权文献
- US20100144149A1 METHOD TO SELECTIVELY POLISH SILICON CARBIDE FILMS 公开/授权日：2010-06-10
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