发明授权
- 专利标题： Semiconductor device with increased safe operating area
- 专利标题（中）： 半导体器件安全运行区域增加
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申请号： US13792876申请日： 2013-03-11
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公开(公告)号： US09537000B2公开(公告)日： 2017-01-03
- 发明人: Weize Chen , Patrice M. Parris
- 申请人： Weize Chen , Patrice M. Parris
- 申请人地址： US TX Austin
- 专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L29/06 ; H01L29/08
摘要：
A semiconductor device includes a substrate having a surface, a composite body region disposed in the substrate, having a first conductivity type, and comprising a body contact region at the surface of the substrate and a well in which a channel is formed during operation, a source region disposed in the semiconductor substrate adjacent the composite body region and having a second conductivity type, and an isolation region disposed between the body contact region and the source region. The composite body region further includes a body conduction path region contiguous with and under the source region, and the body conduction path region has a higher dopant concentration level than the well.
公开/授权文献
- US20140252472A1 SEMICONDUCTOR DEVICE WITH INCREASED SAFE OPERATING AREA 公开/授权日：2014-09-11
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