Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US14425142Application Date: 2013-07-19
-
Publication No.: US09508564B2Publication Date: 2016-11-29
- Inventor: Yoshinori Yokoyama , Kazuyo Endo , Jun Fujita , Shinnosuke Soda , Kazuyasu Nishikawa , Yoichi Nogami , Yoshitsugu Yamamoto , Akira Inoue
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-205771 20120919
- International Application: PCT/JP2013/069669 WO 20130719
- International Announcement: WO2014/045701 WO 20140327
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/52 ; H01L23/10 ; H01L21/50 ; H01L21/56 ; H01L21/78
Abstract:
A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.
Public/Granted literature
- US20150243530A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-08-27
Information query
IPC分类:
