Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14446289Application Date: 2014-07-29
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Publication No.: US09504138B2Publication Date: 2016-11-22
- Inventor: Jung-Hoon Kim , Jin-Hyuk Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2013-0137000 20131112
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H01L23/52 ; H01L23/36 ; H05K1/18

Abstract:
Embodiments of the inventive concept include a semiconductor device having a circuit board including a first outer layer, a contact region in the first outer layer, a second layer formed on an opposite side of the first outer layer, a via-hole, and a plurality of inner layers formed to be stacked between the first layer and the second layer. A case may accommodate the circuit board. The case may have a projection portion that is configured to come in contact with the circuit board in the contact region. The plurality of inner layers may include a ground layer. The first outer layer may be connected to the ground layer through a via-hole. The case may be connected to the ground layer through the first outer layer.
Public/Granted literature
- US20150131242A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-05-14
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