发明授权
- 专利标题： Systems and methods for semiconductor device process determination using reflectivity measurement
- 专利标题（中）： 使用反射率测量的半导体器件工艺测定的系统和方法
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申请号： US14536298申请日： 2014-11-07
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公开(公告)号： US09482518B2公开(公告)日： 2016-11-01
- 发明人: Chun Hsiung Tsai , Sheng-Wen Yu , De-Wei Yu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; G01B11/14 ; G01N21/55 ; H01L21/66 ; H01L21/02 ; H01L21/324
摘要：
Methods and systems that include receiving a plurality of reflectivity measurements on a semiconductor wafer. A reflectivity map is generated based on the received plurality of reflectivity measurements. The generated reflectivity map is used to determine a process parameter of an epitaxial growth process using the reflectivity map. In an embodiment, the process parameter is a power setting (heating) of a lamp of a CVD epitaxy tool.
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