Invention Grant
- Patent Title: Slew rate control boost circuits and methods
- Patent Title (中): 压摆率控制升压电路及方法
-
Application No.: US14533928Application Date: 2014-11-05
-
Publication No.: US09467098B2Publication Date: 2016-10-11
- Inventor: Xin Fan , Vijayakumar Dhanasekaran
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H03F3/26
- IPC: H03F3/26 ; H03F1/32 ; H03F1/02 ; H03F3/04

Abstract:
The present disclosure amplifier circuits and methods having boosted slew rates. In one embodiment, an amplifier circuit comprises an output stage comprising a first output transistor, the first output transistor comprising a gate, a source, and a drain, wherein the gate receives a signal to be amplified. A bias circuit biases the gate of the first output transistor. A damping circuit is coupled the gate of the first output transistor and is configured to produce a high impedance at low frequencies and a low impedance at high frequencies. The damping circuit includes a current limit circuit to limit current to the gate of the first output transistor when a voltage on the gate of the first output transistor decreases in response to the signal.
Public/Granted literature
- US20150381120A1 SLEW RATE CONTROL BOOST CIRCUITS AND METHODS Public/Granted day:2015-12-31
Information query