A recess is formed by partially etching a silicon carbide substrate. A mask layer is formed on the silicon carbide substrate by means of photolithography using the recess as an alignment mark. An impurity is implanted into the silicon carbide substrate using the mask layer. The silicon carbide substrate is annealed. After the annealing, a first electrode layer is deposited on the silicon carbide substrate. The first electrode layer is patterned by means of photolithography using the recess in the silicon carbide substrate as an alignment mark.