发明授权
- 专利标题: Multi-step deep reactive ion etching fabrication process for silicon-based terahertz components
- 专利标题(中): 硅基太赫兹组件的多级深反应离子蚀刻制造工艺
-
申请号: US14253541申请日: 2014-04-15
-
公开(公告)号: US09461352B2公开(公告)日: 2016-10-04
- 发明人: Cecile Jung-Kubiak , Theodore Reck , Goutam Chattopadhyay , Jose Vicente Siles Perez , Robert H. Lin , Imran Mehdi , Choonsup Lee , Ken B. Cooper , Alejandro Peralta
- 申请人: California Institute of Technology
- 申请人地址: US CA Pasadena
- 专利权人: California Institute of Technology
- 当前专利权人: California Institute of Technology
- 当前专利权人地址: US CA Pasadena
- 代理机构: Gates & Cooper LLP
- 主分类号: G02B6/136
- IPC分类号: G02B6/136 ; H01P3/16 ; H01P11/00
摘要:
A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.
公开/授权文献
信息查询