发明授权
US09461352B2 Multi-step deep reactive ion etching fabrication process for silicon-based terahertz components 有权
硅基太赫兹组件的多级深反应离子蚀刻制造工艺

Multi-step deep reactive ion etching fabrication process for silicon-based terahertz components
摘要:
A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.
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