发明授权
- 专利标题： Surface poisoning using ALD for high selectivity deposition of high aspect ratio features
- 专利标题（中）： 表面中毒使用ALD高选择性沉积高纵横比特征
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申请号： US14538292申请日： 2014-11-11
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公开(公告)号： US09460932B2公开(公告)日： 2016-10-04
- 发明人: Paul F. Ma , Jiang Lu , Guodan Wei
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/285 ; H01L21/768
摘要：
Methods of selectively depositing a feature onto a substrate surface while maintaining substantially straight sidewalls on the feature. A portion of the feature is grown and then covered with a protective film. The protective film is removed from the top of the feature, leaving some of the film on the sides of the feature and the process is repeated to grow a feature of desired thickness.
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