发明授权
- 专利标题: High temperature atomic layer deposition of silicon oxide thin films
- 专利标题(中): 氧化硅薄膜的高温原子层沉积
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申请号: US13857507申请日: 2013-04-05
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公开(公告)号: US09460912B2公开(公告)日: 2016-10-04
- 发明人: Haripin Chandra , Meiliang Wang , Manchao Xiao , Xinjian Lei , Ronald Martin Pearlstein , Mark Leonard O'Neill , Bing Han
- 申请人: Air Products and Chemicals, Inc.
- 申请人地址: US PA Allentown
- 专利权人: Air Products and Chemicals, Inc.
- 当前专利权人: Air Products and Chemicals, Inc.
- 当前专利权人地址: US PA Allentown
- 代理商 Rosaleen P. Morris-Oskanian; Joseph D. Rossi
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; H01L21/02 ; C23C16/40 ; C23C16/455 ; C07F7/10
摘要:
Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof R1R2mSi(NR3R4)nXp; and I. R1R2mSi(OR3)n(OR4)qXp. II
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