发明授权
US09460912B2 High temperature atomic layer deposition of silicon oxide thin films 有权
氧化硅薄膜的高温原子层沉积

High temperature atomic layer deposition of silicon oxide thin films
摘要:
Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof R1R2mSi(NR3R4)nXp; and  I. R1R2mSi(OR3)n(OR4)qXp.  II
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