The present disclosure relates to an integrated microsystem with a protection barrier structure, and an associated method. In some embodiments, the integrated microsystem comprises a first die having a plurality of CMOS devices disposed thereon, a second die having a plurality of MEMS devices disposed thereon and a vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die. The second die is bonded to the first die at a bond interface region. The vHF etch barrier structure comprises a vHF barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die.