发明授权
- 专利标题： Memory with bit cell header transistor
- 专利标题（中）： 具有位单元头晶体管的存储器
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申请号： US13902439申请日： 2013-05-24
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公开(公告)号： US09449656B2公开(公告)日： 2016-09-20
- 发明人: I-Han Huang , Ming-Yi Lee , Chia-En Huang , Fu-An Wu , Jung-Ping Yang , Cheng-Hung Lee
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： G11C7/22
- IPC分类号： G11C7/22 ; G11C7/02 ; G11C5/14 ; G11C11/419
摘要：
A memory includes a plurality of bit cells. Each bit cell includes a bit line and a storage cell coupled to the bit line. A header PMOS transistor is coupled to the storage cell in each bit cell. The header PMOS transistor is at least partially turned off during a write operation by a header control signal.
公开/授权文献
- US20140185394A1 Memory with Bit Cell Header Transistor 公开/授权日：2014-07-03
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