Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a finFET, a metal routing layer, a first local interconnect layer, and a second local interconnect layer. The finFET may include a channel, a first source/drain region, a second source/drain region, and a gate stack. The metal routing layer may be separated from the finFET in a vertical direction. The first local interconnect layer may include a first local interconnect that contacts a first metal route in the metal routing layer and that electrically connects to the first source/drain region. The second local interconnect layer may include a second local interconnect that contacts a second metal route in the metal routing layer and that electrically connects to the gate stack.