发明授权
US09409767B2 Energy storage structure, method of manufacturing a support structure for same, and microelectronic assembly and system containing same
有权
能量储存结构，制造与其相同的支撑结构的方法，以及包含其的微电子组件和系统
- 专利标题： Energy storage structure, method of manufacturing a support structure for same, and microelectronic assembly and system containing same
- 专利标题（中）： 能量储存结构，制造与其相同的支撑结构的方法，以及包含其的微电子组件和系统
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申请号： US13977140申请日： 2011-11-03
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公开(公告)号： US09409767B2公开(公告)日： 2016-08-09
- 发明人: Donald S. Gardner , Zhaohui Chen , Wei C. Jin , Eric C. Hannah , John L. Gustafson , Tomm V. Aldridge
- 申请人： Donald S. Gardner , Zhaohui Chen , Wei C. Jin , Eric C. Hannah , John L. Gustafson , Tomm V. Aldridge
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Kenneth A. Nelson
- 国际申请： PCT/US2011/059211 WO 20111103
- 国际公布： WO2013/066337 WO 20130510
- 主分类号： H01G9/00
- IPC分类号： H01G9/00 ; B81B7/00 ; C25F3/02 ; H01G11/04 ; H01M4/00 ; H01G11/26 ; H01G11/30 ; C25F3/12 ; H01M4/04 ; H01M4/38
摘要：
An energy storage structure includes an energy storage device containing at least one porous structure (110, 120, 510, 1010) that contains multiple channels (111, 121), each one of which has an opening (112, 122) to a surface (115, 116, 515, 516, 1015, 1116) of the porous structure, and further includes a support structure (102, 402, 502, 1002) for the energy storage device. In a particular embodiment, the porous structure and the support structure are both formed from a first material, and the support structure physically contacts a first portion (513, 813, 1213) of the energy storage device and exposes a second portion (514, 814, 1214) of the energy storage device.
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