Invention Grant
US09406772B1 Semiconductor structure with a multilayer gate oxide and method of fabricating the same
有权
具有多层栅极氧化物的半导体结构及其制造方法
- Patent Title: Semiconductor structure with a multilayer gate oxide and method of fabricating the same
- Patent Title (中): 具有多层栅极氧化物的半导体结构及其制造方法
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Application No.: US14609446Application Date: 2015-01-30
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Publication No.: US09406772B1Publication Date: 2016-08-02
- Inventor: Shao-Wei Wang , Shu-Ming Yeh , Yu-Tung Hsiao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/51 ; H01L29/423 ; H01L21/02 ; H01L21/3105 ; H01L29/66
Abstract:
A semiconductor structure with a multilayer gate oxide is provided. The structure includes a substrate. A multilayer gate oxide is disposed on the substrate, wherein the multilayer gate oxide includes a first gate oxide and a second gate oxide. The first gate oxide contacts the substrate and the second gate oxide is disposed on and contacts the first gate oxide. The second gate oxide is hydrophilic. The first gate oxide is formed by a thermal oxidation process. The second gate oxide is formed by a chemical treatment.
Public/Granted literature
- US20160225872A1 SEMICONDUCTOR STRUCTURE WITH A MULTILAYER GATE OXIDE AND METHOD OF FABRICATING THE SAME Public/Granted day:2016-08-04
Information query
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