发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14356984申请日： 2011-11-09
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公开(公告)号： US09397206B2公开(公告)日： 2016-07-19
- 发明人: Satoru Kameyama
- 申请人： Satoru Kameyama
- 申请人地址： JP Toyota-Shi
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址： JP Toyota-Shi
- 代理机构： Kenyon & Kenyon LLP
- 国际申请： PCT/JP2011/075838 WO 20111109
- 国际公布： WO2013/069113 WO 20130516
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/739 ; H01L29/861 ; H01L27/06 ; H01L21/265 ; H01L21/268 ; H01L29/66 ; H01L29/08 ; H01L29/36
摘要：
A semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed is provided. In the semiconductor device, the diode region includes a second conductivity type cathode layer. An impurity concentration of second conductivity type impurities of the cathode layer is distributed in a curve pattern having at least two peaks, and the impurity concentration of the second conductivity type impurities is higher than that of first conductivity type impurities at all depths of the cathode layer.
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