发明授权
- 专利标题： Method to etch non-volatile metal materials
- 专利标题（中）： 蚀刻非挥发性金属材料的方法
-
申请号： US14818225申请日： 2015-08-04
-
公开(公告)号： US09391267B2公开(公告)日： 2016-07-12
- 发明人: Meihua Shen , Harmeet Singh , Samantha S. H. Tan , Jeffrey Marks , Thorsten Lill , Richard P. Janek , Wenbing Yang , Prithu Sharma
- 申请人： Lam Research Corporation
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Beyer Law Group LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L43/12 ; H01L21/02 ; H01L45/00 ; H01L27/22 ; H01L43/02 ; H01L43/10 ; C23F4/00
摘要：
A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds.
公开/授权文献
- US20150340603A1 METHOD TO ETCH NON-VOLATILE METAL MATERIALS 公开/授权日：2015-11-26
信息查询
IPC分类:
