发明授权
US09391173B2 FinFET device with vertical silicide on recessed source/drain epitaxy regions
有权
FinFET器件，垂直硅化物在凹陷源极/漏极外延区域
- 专利标题： FinFET device with vertical silicide on recessed source/drain epitaxy regions
- 专利标题（中）： FinFET器件，垂直硅化物在凹陷源极/漏极外延区域
-
申请号： US14583454申请日： 2014-12-26
-
公开(公告)号： US09391173B2公开(公告)日： 2016-07-12
- 发明人: Keith E. Fogel , Pranita Kerber , Qiqing C. Ouyang , Alexander Reznicek
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto
- 代理商 Vazken Alexanian
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L29/08
摘要：
A method of forming a semiconductor device that includes forming a fin structure from a semiconductor substrate, and forming a gate structure on a channel region portion of the fin structure. A source region and a drain region are formed on a source region portion and a drain region portion of the fin structure on opposing sides of the channel portion of the fin structure. At least one sidewall of the source region portion and the drain region portion of the fin structure is exposed. A metal semiconductor alloy is formed on the at least one sidewall of the source region portion and the drain region portion of the fin structure that is exposed.
公开/授权文献
信息查询
IPC分类:
