Invention Grant
US09391173B2 FinFET device with vertical silicide on recessed source/drain epitaxy regions
有权
FinFET器件，垂直硅化物在凹陷源极/漏极外延区域
- Patent Title: FinFET device with vertical silicide on recessed source/drain epitaxy regions
- Patent Title (中): FinFET器件，垂直硅化物在凹陷源极/漏极外延区域
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Application No.: US14583454Application Date: 2014-12-26
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Publication No.: US09391173B2Publication Date: 2016-07-12
- Inventor: Keith E. Fogel , Pranita Kerber , Qiqing C. Ouyang , Alexander Reznicek
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L29/08
Abstract:
A method of forming a semiconductor device that includes forming a fin structure from a semiconductor substrate, and forming a gate structure on a channel region portion of the fin structure. A source region and a drain region are formed on a source region portion and a drain region portion of the fin structure on opposing sides of the channel portion of the fin structure. At least one sidewall of the source region portion and the drain region portion of the fin structure is exposed. A metal semiconductor alloy is formed on the at least one sidewall of the source region portion and the drain region portion of the fin structure that is exposed.
Public/Granted literature
- US20150303281A1 FINFET DEVICE WITH VERTICAL SILICIDE ON RECESSED SOURCE/DRAIN EPITAXY REGIONS Public/Granted day:2015-10-22
Information query
IPC分类:
