发明授权
US09385241B2 Electrostatic discharge (ESD) protection circuits, integrated circuits, systems, and methods for forming the ESD protection circuits
有权
静电放电（ESD）保护电路，集成电路，系统和形成ESD保护电路的方法
- 专利标题： Electrostatic discharge (ESD) protection circuits, integrated circuits, systems, and methods for forming the ESD protection circuits
- 专利标题（中）： 静电放电（ESD）保护电路，集成电路，系统和形成ESD保护电路的方法
-
申请号： US12766186申请日： 2010-04-23
-
公开(公告)号： US09385241B2公开(公告)日： 2016-07-05
- 发明人: Shu-Chuan Lee , Kuo-Ji Chen , Wade Ma
- 申请人： Shu-Chuan Lee , Kuo-Ji Chen , Wade Ma
- 申请人地址： TW
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L23/62
- IPC分类号： H01L23/62 ; H01L29/861 ; H01L27/02 ; H01L29/16 ; H01L29/20
摘要：
An electrostatic discharge (ESD) protection circuit coupled with an input/output (I/O) pad is provided. The ESD protection circuit includes a first field oxide device coupled between a first terminal that is capable of providing a first supply voltage and the I/O pad. The first field oxide device includes a drain end having a first type of dopant and a source end having the first type of dopant. The first field oxide device includes a first doped region having a second type of dopant disposed adjacent to the drain end of the first field oxide device and a second doped region having the second type of dopant disposed adjacent to the source end of the first field oxide device.
公开/授权文献
信息查询
IPC分类:
