发明授权
US09385225B2 Method of making a circuit structure having islands between source and drain
有权
制造在源极和漏极之间具有岛的电路结构的方法
- 专利标题： Method of making a circuit structure having islands between source and drain
- 专利标题（中）： 制造在源极和漏极之间具有岛的电路结构的方法
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申请号： US14547770申请日： 2014-11-19
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公开(公告)号： US09385225B2公开(公告)日： 2016-07-05
- 发明人: Chen-Ju Yu , Chih-Wen Hsiung , Fu-Wei Yao , Chun-Wei Hsu , Jiun-Lei Jerry Yu , Fu-Chih Yang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW HsinChu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW HsinChu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/778 ; H01L29/06 ; H01L29/66 ; H01L21/02 ; H01L21/3065 ; H01L29/205 ; H01L29/20
摘要：
A method of making a circuit structure includes growing a bulk layer over a substrate, and growing a donor-supply layer over the bulk layer. The method further includes depositing a doped layer over the donor-supply layer, and patterning the doped layer to form a plurality of islands. The method further includes forming a gate structure over the donor-supply layer, wherein the gate structure is partially over a largest island of the plurality of islands. The method further includes forming a drain over the donor-supply layer, wherein at least one island of the plurality of islands is between the gate structure and the drain.
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