发明授权
- 专利标题： Method of forming an integrated multichannel device and single channel device structure
- 专利标题（中）： 形成集成多通道器件和单通道器件结构的方法
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申请号： US14458906申请日： 2014-08-13
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公开(公告)号： US09385224B2公开(公告)日： 2016-07-05
- 发明人: Karen M. Renaldo , Eric J. Stewart , Robert S. Howell , Howell George Henry , Harlan Carl Cramer , Justin Andrew Parke , Matthew Russell King
- 申请人： Karen M. Renaldo , Eric J. Stewart , Robert S. Howell , Howell George Henry , Harlan Carl Cramer , Justin Andrew Parke , Matthew Russell King
- 申请人地址： US VA Falls Church
- 专利权人： Northrop Grumman Systems Corporation
- 当前专利权人： Northrop Grumman Systems Corporation
- 当前专利权人地址： US VA Falls Church
- 代理机构： Tarolli, Sundheim, Covell & Tummino LLP
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L31/072 ; H01L31/109 ; H01L31/0328 ; H01L31/0336 ; H01L29/778 ; H01L21/02 ; H01L21/76 ; H01L29/06 ; H01L21/302 ; H01L29/66
摘要：
An integrated circuit is disclosed that includes a single channel device having a first portion of a single shared heterostructure overlying a substrate structure in a single channel device area, and a gate contact that is in contact with the first portion of the single shared heterostructure. The integrated circuit also includes a multichannel device comprising a second portion of the single shared heterostructure overlying the substrate structure in a multichannel device area, a barrier layer overlying the second portion of the single shared heterostructure, and a superlattice structure overlying the barrier layer, the superlattice structure comprising a plurality of heterostructures. An isolation region in the single shared heterostructure electrical isolates the single channel device from the multichannel device.
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